Sapphire (Al₂O₃) is a uniquely versatile material with superior physical, chemical, and optical properties. It is resistant to high temperatures, thermal shock, abrasion, and chemical corrosion, making it ideal for demanding applications. As a transparent material, sapphire is particularly useful in infrared (IR) applications ranging from 3µm to 5µm. C-plane sapphire substrates are commonly used for growing III-V and II-VI semiconductors like Gallium Nitride (GaN) for blue LEDs and laser diodes, while R-plane sapphire substrates are preferred for hetero-epitaxial deposition of silicon in microelectronics.
Optical Properties:
Sapphire wafers exhibit excellent optical transparency, particularly in the visible and near-infrared regions, making them ideal for optical sensors, lasers, and optoelectronic devices.
Hardness & Wear Resistance:
Sapphire is second only to diamond in hardness, offering exceptional resistance to scratching and wear. This makes it an ideal material for high-durability applications, such as watch surfaces and optical windows.
Chemical Stability:
Sapphire wafers are chemically inert and resistant to acid and alkali corrosion, making them suitable for use in harsh environments, such as chemical sensors and biomedical devices.
Termal Özellikler:
Sapphire has high thermal conductivity and capacity, ensuring stability in high-temperature environments. It is ideal for high-temperature sensors, laser cooling systems, and power electronics.
| Öğe | Specification |
|---|---|
| Malzeme | Artificial Sapphire (Al₂O₃ ≥ 99.99%) |
| Kalınlık | 3000 ± 20μm |
| Çap | 12-inch |
| Surface Orientation | C-plane (0001) |
| TTV (Total Thickness Variation) | ≤ 15μm |
| BOW | -25 ~ 0μm |
| Warp | ≤ 30μm |
| Front Side Finish | Epi-ready (Ra < 0.3nm) |
| Back Side Finish | Lapping (Ra 0.6 – 1.2μm) |
| Packaging | Vacuum Packaging in Clean Room |
| Prime Grade | High quality cleaning, particle size ≥ 0.3μm |
| Remarks | Customizable specifications available (A/R/M plane orientation, off-angle, shape, double-side polishing) |
LED & Laser Diodes:
C-plane sapphire wafers are extensively used for growing wide-bandgap semiconductors such as GaN, AlN, and ZnO, which are essential for blue, UV, and deep-UV LEDs and laser diodes.
Electronic Devices:
Sapphire is used as a substrate for heterojunction bipolar transistors (HBTs), laser diodes, UV detectors, and heat dissipation materials in high-temperature, high-power, and high-frequency devices.
Semiconductor Manufacturing:
Sapphire wafers are used in the epitaxial growth of semiconductor materials for optical and power electronics, including applications in high-performance sensors, microelectronics, and more.
We offer customization for sapphire wafers in various sizes (1-inch to 12-inch) and specifications tailored to your needs. Features include:
High-purity single-crystal Al₂O₃ for optical-grade materials.
Advanced CMP (chemical-mechanical polishing) technology for smooth surfaces.
Surface roughness as low as 0.2 nm for C-plane and 0.5 nm for other orientations (A-plane, M-plane, R-plane).
Cleaned with ultrapure water (≥ 18 MΩ*cm) in a Class 100 cleanroom.
Available in boxes of 25 wafers or individual packaging for research flexibility.
Product traceability with unique serial numbers.
Q1: What is the difference between sapphire and silicon wafers?
A: Sapphire is a transparent material, ideal for applications such as LEDs, as it allows light to pass through efficiently. Silicon, on the other hand, is opaque and less effective for light extraction, although it is commonly used for electronic applications.
Q2: What is sapphire’s role in semiconductor manufacturing?
A: Sapphire serves as a substrate for growing high-performance semiconductor materials, especially for optoelectronic applications like LEDs, laser diodes, and UV detectors. Its durability and excellent optical properties make it ideal for such advanced technologies.
Q3: Why is silicon used on sapphire substrates?
A: Silicon-on-sapphire (SOS) technology utilizes sapphire’s excellent electrical insulation properties to prevent unwanted current flow and radiation interference in electronic devices, especially for CMOS-based applications.
