{"id":1271,"date":"2026-01-26T16:53:05","date_gmt":"2026-01-26T08:53:05","guid":{"rendered":"https:\/\/www.sapphire-glass.net\/?post_type=product&p=1271"},"modified":"2026-01-26T16:58:34","modified_gmt":"2026-01-26T08:58:34","slug":"12-inch-300mm-4h-6h-sic-single-crystal-silicon-carbide-wafer-for-power-electronics-led-applications","status":"publish","type":"product","link":"https:\/\/www.sapphire-glass.net\/sv\/product\/12-inch-300mm-4h-6h-sic-single-crystal-silicon-carbide-wafer-for-power-electronics-led-applications\/","title":{"rendered":"12-Inch 300mm 4H\/6H SiC Single Crystal Silicon Carbide Wafer for Power Electronics & LED Applications"},"content":{"rendered":"

ZMSH 12-inch (300mm) SiC single crystal wafers are high-purity, wide-bandgap semiconductors produced via Physical Vapor Transport (PVT) method. With excellent electrical, thermal, and mechanical properties, SiC wafers are ideal for high-power, high-voltage, and high-frequency applications, as well as GaN-based LED and laser diode substrates.<\/p>\n

\"12-Inch-300mm-4H6H-SiC-Single-Crystal-Silicon-Carbide-Wafer-for-Power-LED-Devices1-300x300 \"12-Inch-300mm-4H6H-SiC-Single-Crystal-Silicon-Carbide-Wafer-for-Power-LED-Devices2-300x300 \"12-Inch-300mm-4H6H-SiC-Single-Crystal-Silicon-Carbide-Wafer-for-Power-LED-Devices3-300x300<\/p>\n

Our 12-inch wafers feature ultra-low basal plane dislocation (BPD) density<\/strong>, high thermal conductivity, and precise crystallographic orientation, ensuring superior device performance, reliability, and reproducibility.<\/p>\n

Key Features<\/strong><\/h3>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Property<\/th>\n4H-SiC<\/th>\n6H-SiC<\/th>\n<\/tr>\n<\/thead>\n
Crystal Structure<\/td>\nHexagonal<\/td>\nHexagonal<\/td>\n<\/tr>\n
Lattice Constant<\/td>\na=3.08 \u00c5, c=10.05 \u00c5<\/td>\na=3.08 \u00c5, c=15.12 \u00c5<\/td>\n<\/tr>\n
Band Gap<\/td>\n3.23 eV<\/td>\n3.02 eV<\/td>\n<\/tr>\n
Hardness (Mohs)<\/td>\n9.2<\/td>\n9.2<\/td>\n<\/tr>\n
Thermal Conductivity (N-type, 0.02 \u03a9\u00b7cm)<\/td>\na~4.2 W\/cm\u00b7K, c~3.7 W\/cm\u00b7K<\/td>\na~4.6 W\/cm\u00b7K, c~3.2 W\/cm\u00b7K<\/td>\n<\/tr>\n
Thermal Expansion Coefficient<\/td>\n4\u20135\u00d710\u207b\u2076\/K<\/td>\n4\u20135\u00d710\u207b\u2076\/K<\/td>\n<\/tr>\n
Dielectric Constant<\/td>\n~9.66<\/td>\n~9.66<\/td>\n<\/tr>\n
Resistivitet<\/td>\n0.015\u20130.028 \u03a9\u00b7cm (N-type)<\/td>\n>1\u00d710\u2075 \u03a9\u00b7cm (Semi-insulating)<\/td>\n<\/tr>\n
Orientation<\/td>\n<0001>, 4\u00b0 off-axis<\/td>\n<0001>, 4\u00b0 off-axis<\/td>\n<\/tr>\n
Polishing<\/td>\nSingle-side or double-side<\/td>\nSingle-side or double-side<\/td>\n<\/tr>\n
Surface Roughness<\/td>\nRa \u2264 5\u00c5<\/td>\nRa \u2264 5\u00c5<\/td>\n<\/tr>\n
TTV<\/td>\n\u226415 \u00b5m<\/td>\n\u226415 \u00b5m<\/td>\n<\/tr>\n
Bow\/Warp<\/td>\n\u226480 \u00b5m<\/td>\n\u226480 \u00b5m<\/td>\n<\/tr>\n
Tjocklek<\/td>\n0.35\u20131.0 mm (customizable)<\/td>\n0.35\u20131.0 mm (customizable)<\/td>\n<\/tr>\n
Monocrystal Zone<\/td>\n\u2265290 mm<\/td>\n\u2265290 mm<\/td>\n<\/tr>\n
EPD (Etch Pit Density)<\/td>\n\u22641\/cm\u00b2<\/td>\n\u22641\/cm\u00b2<\/td>\n<\/tr>\n
Chiping<\/td>\n\u22642 mm<\/td>\n\u22642 mm<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Applications<\/strong><\/h3>\n

1. Power Electronics:<\/strong><\/p>\n

    \n
  • \n

    SiC MOSFETs, PiN diodes, Schottky diodes (SBD), JBS diodes, IGBTs, and SiC BJTs.<\/p>\n<\/li>\n

  • \n

    High-efficiency power modules with smaller size, lighter weight, and reduced energy loss<\/strong> compared to silicon.<\/p>\n<\/li>\n

  • \n

    Supports devices operating at high voltages (3kV\u201312kV) and high temperatures.<\/p>\n<\/li>\n<\/ul>\n

    2. Optoelectronic Devices:<\/strong><\/p>\n

      \n
    • \n

      Substrate for GaN-based LEDs and laser diodes<\/strong>.<\/p>\n<\/li>\n

    • \n

      Excellent lattice match and thermal compatibility with GaN layers improves light extraction efficiency<\/strong> och heat dissipation<\/strong>.<\/p>\n<\/li>\n

    • \n

      Enables vertical device structures without current diffusion layer.<\/p>\n<\/li>\n<\/ul>\n

      3. Research & Advanced Devices:<\/strong><\/p>\n

        \n
      • \n

        Suitable for experimental research in BPD reduction, high-voltage devices, and next-generation SiC electronics<\/strong>.<\/p>\n<\/li>\n

      • \n

        Used in high-frequency and high-temperature electronic devices.<\/p>\n<\/li>\n<\/ul>\n

        Advantages<\/strong><\/h3>\n
          \n
        1. \n

          Low BPD Density:<\/strong><\/p>\n

            \n
          • \n

            Optimized PVT growth, seed bonding, and graphite crucible selection reduce basal plane dislocations below 1000 cm\u207b\u00b2<\/strong>, improving reliability of high-power and high-voltage devices.<\/p>\n<\/li>\n<\/ul>\n<\/li>\n

          • \n

            Excellent Thermal & Electrical Performance:<\/strong><\/p>\n

              \n
            • \n

              High thermal conductivity ensures effective heat dissipation.<\/p>\n<\/li>\n

            • \n

              Wide bandgap and high electron mobility minimize energy loss under high voltage and high temperature.<\/p>\n<\/li>\n<\/ul>\n<\/li>\n

            • \n

              Large 12-Inch Diameter:<\/strong><\/p>\n

                \n
              • \n

                Enables mass production of power devices and LED substrates.<\/p>\n<\/li>\n

              • \n

                Customizable thickness, resistivity, and orientation for specific applications.<\/p>\n<\/li>\n<\/ul>\n<\/li>\n

              • \n

                High-Quality Surface Finish:<\/strong><\/p>\n

                  \n
                • \n

                  Single-side or double-side polished wafers with ultra-low roughness (Ra \u2264 5\u00c5) ensure uniform epitaxial growth.<\/p>\n<\/li>\n<\/ul>\n<\/li>\n

                • \n

                  Cleanroom Packaging:<\/strong><\/p>\n

                    \n
                  • \n

                    Each wafer packaged individually in a 100-grade clean environment<\/strong> to prevent contamination.<\/p>\n<\/li>\n<\/ul>\n<\/li>\n<\/ol>\n

                    VANLIGA FR\u00c5GOR<\/strong><\/h3>\n

                    Q1: What is the typical BPD density of ZMSH 12-inch SiC wafers?<\/strong>
                    A1:<\/strong> Basal plane dislocation density is controlled below 1000 cm\u207b\u00b2<\/strong> through optimized growth, cooling, and seed bonding processes, ensuring superior device reliability.<\/p>\n

                    Q2: Can the wafer thickness, orientation, or resistivity be customized?<\/strong>
                    A2:<\/strong> Yes. Thickness (0.35\u20131.0 mm), off-axis orientation (<0001> 4\u00b0 or custom), and resistivity (N-type 0.015\u20130.028 \u03a9\u00b7cm or semi-insulating >1\u00d710\u2075 \u03a9\u00b7cm) can all be customized.<\/p>\n

                    Q3: How does SiC substrate benefit GaN-based LED applications?<\/strong>
                    A3:<\/strong> SiC provides lattice and thermal compatibility with GaN, allows vertical device structure, improves light extraction efficiency, and enhances thermal management, enabling longer device lifespan.<\/p>\n

                    ZMSH Commitment<\/strong><\/h3>\n

                    ZMSH is dedicated to providing high-performance 12-inch SiC wafers<\/strong> with ultra-low dislocation density and reproducible quality. Our wafers are ideal for power electronics, optoelectronics, and next-generation semiconductor research<\/strong>, with customizable specifications to meet industrial and research needs.<\/p>","protected":false},"excerpt":{"rendered":"

                    ZMSH 12-inch (300mm) SiC single crystal wafers are high-purity, wide-bandgap semiconductors produced via Physical Vapor Transport (PVT) method. With excellent electrical, thermal, and mechanical properties, SiC wafers are ideal for high-power, high-voltage, and high-frequency applications, as well as GaN-based LED and laser diode substrates.<\/p>","protected":false},"featured_media":1355,"comment_status":"open","ping_status":"closed","template":"","meta":{"_acf_changed":false},"product_brand":[],"product_cat":[36,37,35],"product_tag":[105,106,107,108,109,110,111],"class_list":["post-1271","product","type-product","status-publish","has-post-thumbnail","product_cat-4h-n","product_cat-6h-n","product_cat-sic-wafer","product_tag-12-inch-4h-sic","product_tag-12-inch-6h-sic","product_tag-12-inch-sic-ingot","product_tag-12-inch-sic-single-crystal","product_tag-12-inch-sic-substrate","product_tag-12-inch-sic-wafer","product_tag-12-inch-silicon-carbide","first","instock","shipping-taxable","product-type-simple"],"acf":[],"_links":{"self":[{"href":"https:\/\/www.sapphire-glass.net\/sv\/wp-json\/wp\/v2\/product\/1271","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sapphire-glass.net\/sv\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.sapphire-glass.net\/sv\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sapphire-glass.net\/sv\/wp-json\/wp\/v2\/comments?post=1271"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sapphire-glass.net\/sv\/wp-json\/wp\/v2\/media\/1355"}],"wp:attachment":[{"href":"https:\/\/www.sapphire-glass.net\/sv\/wp-json\/wp\/v2\/media?parent=1271"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.sapphire-glass.net\/sv\/wp-json\/wp\/v2\/product_brand?post=1271"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.sapphire-glass.net\/sv\/wp-json\/wp\/v2\/product_cat?post=1271"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.sapphire-glass.net\/sv\/wp-json\/wp\/v2\/product_tag?post=1271"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}