Shanghai Xinkehui New Material Co., Ltd.

Silicon Carbide SiC Rectangle Substrate – High-Purity Single-Crystal SiC Plate for Power, RF & Optoelectronic Applications

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single wafer package in 100-grade cleaning room
  • Description

The Silicon Carbide (SiC) Rectangle Substrate is a high-performance single-crystal semiconductor material designed for next-generation electronic and photonic devices. With its wide bandgap, excellent thermal conductivity, superior chemical resistance, and high mechanical strength, SiC is widely regarded as one of the most advanced substrate materials for high-power, high-temperature, and high-frequency applications.

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This rectangular SiC substrate offers flexible dimension customization, making it ideal for device R&D, prototype fabrication, optical components, epitaxy growth, and high-reliability industrial systems.

Key Features & Advantages

1. Wide Bandgap Semiconductor

  • Bandgap of ~3.2–3.3 eV, significantly higher than silicon

  • Supports high breakdown voltage and ultra-efficient switching performance

2. Excellent Thermal Conductivity

  • 3.0–4.9 W/cm·K, ensuring efficient heat dissipation

  • Suitable for high-density power modules and RF devices

3. High Mechanical Strength

  • Mohs hardness ~9.2, almost as hard as diamond

  • Resistant to wear during wire-sawing, CMP, and device process steps

4. High-Temperature Stability

  • Maintains electrical and structural integrity above 600°C

  • Ideal for aerospace, automotive, and extreme-environment electronics

5. Customizable Dimensions & Doping

  • Various rectangle sizes available

  • N-type, P-type, semi-insulating options

  • Surface finish available in single / double polished, epi-ready

Manufacturing Process (PVT Growth)

  1. Raw Material Loading
    Ultra-high-purity SiC powders are placed inside a graphite crucible.

  2. Crystal Growth (>2000°C)
    Using Physical Vapor Transport (PVT), SiC sublimates and recondenses on a seed crystal.

  3. Ingot Processing
    The crystal boule is ground and oriented (C-plane, 0° or 4° off-axis).

  4. High-Precision Slicing
    Diamond wire saws cut the crystal into rectangle plates or wafers.

  5. Lapping & Grinding
    Ensures flatness, uniform thickness, and removes slicing marks.

  6. Chemical Mechanical Polishing (CMP)
    Produces a mirror-grade surface suitable for epitaxial deposition.

  7. Optional Doping
    Nitrogen (N-type), Aluminum/Boron (P-type), or SI/HPSI for RF & detector applications.

  8. Quality Inspection
    Micropipe density, warp, bow, Ra value, and TTV are fully tested.

Applications

Power Electronics

  • SiC MOSFETs

  • Schottky barrier diodes (SBD)

  • EV traction inverters

  • High-voltage rectifiers

RF & Microwave Devices

  • Radar transmitters

  • 5G base station modules

  • Satellite communication systems

Optoelectronics

  • UV lasers

  • UV photodetectors

  • High-power LED substrates

Extreme-Environment Electronics

  • Aerospace & defense

  • High-temperature sensors

  • High-radiation equipment

R&D and Prototype Development

  • Material characterization

  • Epitaxial testing

  • Device structure optimization

Technical Specifications

1. General Specifications

Item Specification
Material Single-crystal Silicon Carbide (SiC)
Shape Rectangle substrate / plate
Available Polytypes 4H-SiC, 6H-SiC
Orientation C-plane (0001), Off-axis 0° / 4°
Thickness 330–500 μm (customizable)
Surface Finish SSP / DSP / Epi-ready polished
Doping N-type, P-type, Semi-insulating HPSI
Defect Density < 0.5 cm⁻² (4H standard), optional lower
Grade Research-grade / device-grade

2. Physical & Electrical Properties

Property 4H-SiC 6H-SiC
Bandgap ~3.26 eV ~3.02 eV
Thermal Conductivity 4.9 W/cm·K 4.9 W/cm·K
Density 3.21 g/cm³ 3.21 g/cm³
Breakdown Electric Field 2.2–2.8 MV/cm 2.2–2.8 MV/cm
Electron Mobility ~800 cm²/V·s ~400 cm²/V·s
Mohs Hardness ~9.2 ~9.2
Dielectric Constant 9.6 9.66

3. Surface & Quality Parameters

Parameter Typical Value
Surface Roughness (Ra) ≤ 0.2 nm (polished)
TTV < 5 μm
Bow < 10 μm
Warp < 15 μm
Particle Level < 15 @ ≥0.3 μm
Flatness λ/10 @ 632.8 nm (optional)

4. Customization Options

Customizable Item Options
Dimensions Any rectangular size available
Thickness 0.33–0.50 mm standard; others on request
Polytype 4H-SiC / 6H-SiC
Orientation 0° or 4° off-axis
Polishing SSP / DSP / Epi-ready
Doping N-type, P-type, SI / HPSI
Edge Shape Square edge / chamfered edge

FAQ

Q1: Can the rectangle substrate be made in any size?
Yes. Fully customizable rectangular dimensions are available based on your design.

Q2: Do you provide epitaxy services?
We offer epi-ready polishing, and epitaxial layers can be added upon request.

Q3: What’s the typical lead time?
Standard production lead time is about 30 days.

Q4: Is research-grade and device-grade quality available?
Yes. Both grades are produced according to customer requirements.

Packaging & Delivery

  • Packaging: Custom anti-static boxes, vacuum-sealed or nitrogen-filled

  • Shipping: Protective cushioning for safe transport

  • Lead Time: 2-4 weeks

  • Supply Capability: Flexible based on order volume