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Carrier and support substrates for semiconductor processing<\/p>\n<\/li>\n
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GaN-on-Sapphire epitaxial carrier plates<\/p>\n<\/li>\n
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Large-area optical and laser windows<\/p>\n<\/li>\n
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High-temperature or vacuum viewports<\/p>\n<\/li>\n
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Structural sapphire base plates<\/p>\n<\/li>\n
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Research and custom industrial platforms<\/p>\n<\/li>\n<\/ul>\n
Technical Specifications<\/h2>\n
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\n \nParameter<\/th>\n Specification<\/th>\n<\/tr>\n<\/thead>\n \n Material<\/td>\n Single Crystal Sapphire (Al\u2082O\u2083)<\/td>\n<\/tr>\n \n Crystal Purity<\/td>\n \u2265 99.99%<\/td>\n<\/tr>\n \n Geometry<\/td>\n Square<\/td>\n<\/tr>\n \n Overall Dimensions<\/td>\n 310 \u00d7 310 mm<\/td>\n<\/tr>\n \n Nominal Thickness<\/td>\n 1.0 mm<\/td>\n<\/tr>\n \n Thickness Tolerance<\/td>\n \u00b1 0.02 mm<\/td>\n<\/tr>\n \n Total Thickness Variation (TTV)<\/td>\n < 10 \u03bcm<\/td>\n<\/tr>\n \n Crystal Orientation<\/td>\n C-Plane (0001)<\/td>\n<\/tr>\n \n Surface Processing<\/td>\n Double-Side Polished (DSP)<\/td>\n<\/tr>\n \n Surface Roughness<\/td>\n Ra < 0.2 nm<\/td>\n<\/tr>\n \n Surface Flatness<\/td>\n \u03bb\/10 @ 633 nm<\/td>\n<\/tr>\n \n Edge Treatment<\/td>\n Chamfered \/ Radius Corners<\/td>\n<\/tr>\n \n Optical Grade<\/td>\n High Optical Quality<\/td>\n<\/tr>\n \n Hardness<\/td>\n Mohs 9<\/td>\n<\/tr>\n \n Density<\/td>\n 3.98 g\/cm\u00b3<\/td>\n<\/tr>\n \n Thermal Conductivity<\/td>\n ~35 W\/m\u00b7K (25 \u00b0C)<\/td>\n<\/tr>\n \n Maximum Service Temperature<\/td>\n > 1600 \u00b0C<\/td>\n<\/tr>\n \n Chemical Stability<\/td>\n Excellent resistance to acids and alkalis<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n Performance Advantages<\/h2>\n
Large-Area Dimensional Stability
![\"-44-300x300](\"https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/\u672a\u547d\u540d\u7684\u8bbe\u8ba1-44-300x300.webp\" "\\"\\"")
<\/h3>\nMaintains high flatness and tight thickness control across a 310 mm square surface, enabling reliable use in large-format systems.<\/p>\n
High Mechanical Strength<\/h3>\n
The intrinsic hardness and strength of sapphire reduce the risk of surface damage and deformation during handling and operation.<\/p>\n
Thermal Endurance<\/h3>\n
Capable of sustaining high-temperature cycles typical of epitaxial growth, thermal processing, and aerospace environments.<\/p>\n
Optical-Grade Surface Finish<\/h3>\n
Sub-nanometer surface roughness enables use in optical transmission, bonding, and precision alignment applications.<\/p>\n
Chemical Inertness<\/h3>\n
Superior resistance to corrosive gases, acids, and alkalis compared with glass or fused quartz substrates.<\/p>\n
Manufacturing & Inspection<\/h2>\n
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Synthetic sapphire crystal growth<\/p>\n<\/li>\n
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Precision cutting and stress-relief processing<\/p>\n<\/li>\n
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Large-format double-side polishing<\/p>\n<\/li>\n
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Interferometric flatness measurement<\/p>\n<\/li>\n
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Full dimensional and visual inspection prior to shipment<\/p>\n<\/li>\n<\/ul>\n
Frequently Asked Questions<\/h2>\n
Q1: How should this product be classified?
![\"-45-300x300](\"https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/\u672a\u547d\u540d\u7684\u8bbe\u8ba1-45-300x300.webp\" "\\"\\"")
This product is classified as a large-area sapphire substrate or carrier plate, not a standard semiconductor wafer.<\/p>\nQ2: Are other sizes or thicknesses available?
Yes. Custom square or rectangular dimensions from 250 mm to 310 mm per side and various thicknesses are available upon request.<\/p>\nQ3: Is this suitable for GaN epitaxial processing?
Yes. It is commonly used as a GaN-on-Sapphire carrier substrate in MOCVD and related epitaxial systems.<\/p>\nQ4: How is surface flatness verified?
Each substrate is measured using laser interferometry to ensure \u03bb\/10 flatness at 633 nm.<\/p>\nQ5: How is the substrate protected during shipping?
Products are packed in custom shock-absorbing, clean-grade packaging designed specifically for ultra-large sapphire components.<\/p>","protected":false},"excerpt":{"rendered":"The 310 \u00d7 310 \u00d7 1 mm Large-Area Square Sapphire Substrate is a precision-engineered sapphire plate produced from high-purity single-crystal aluminum oxide (Al\u2082O\u2083).<\/p>","protected":false},"featured_media":1422,"comment_status":"open","ping_status":"closed","template":"","meta":{"_acf_changed":false},"product_brand":[],"product_cat":[214],"product_tag":[215,216,213,217,218],"class_list":["post-1297","product","type-product","status-publish","has-post-thumbnail","product_cat-sapphire-wafer","product_tag-al2o3-substrate","product_tag-sapphire-carrier-plate","product_tag-single-crystal-sapphire","product_tag-square-sapphire-plate","product_tag-ultra-large-sapphire-substrate","first","instock","shipping-taxable","product-type-simple"],"acf":[],"_links":{"self":[{"href":"https:\/\/www.sapphire-glass.net\/en\/wp-json\/wp\/v2\/product\/1297","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sapphire-glass.net\/en\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.sapphire-glass.net\/en\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sapphire-glass.net\/en\/wp-json\/wp\/v2\/comments?post=1297"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sapphire-glass.net\/en\/wp-json\/wp\/v2\/media\/1422"}],"wp:attachment":[{"href":"https:\/\/www.sapphire-glass.net\/en\/wp-json\/wp\/v2\/media?parent=1297"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.sapphire-glass.net\/en\/wp-json\/wp\/v2\/product_brand?post=1297"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.sapphire-glass.net\/en\/wp-json\/wp\/v2\/product_cat?post=1297"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.sapphire-glass.net\/en\/wp-json\/wp\/v2\/product_tag?post=1297"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
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